- Excellent linearity, stability and reliability
- Rugged construction
- Extremely low noise
- High power gain
- Low total cost of ownership

We offer HF/VHF/UHF N-channel Power MOSFET
B | L | F | 8 | G | 22 | L | S | -45 | P | R | B | N | A | G | V | W |
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B: semiconductor die made of Si | L: high-frequency power transistor | P: overmolded plastic package (OMP) M: MMIC module D: fully integrated Doherty amplifier C: air cavity plastic (ACP) package F: ceramic package | LDMOS technology generation | H: high voltage LDMOS (50 V) G: standard D: Doherty | operating frequency (in 100 MHz; maximum) | flange material L = CPC X =Cu | option: earless package | P1dB power | push-pull device | enhanced ruggedness | option: current sense lead | specialty | asymmetrical Doherty | gullwing-shaped leads | video bandwidth enhanced | supply thru V-leads |
B | L | C | 2425 | M | 8 | L | S | 300 | P |
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B: semiconductor die made of Si | L: high-frequency power transistor | P: overmolded plastic package (OMP) C: air cavity plastic (ACP) package F: ceramic package | operating frequency (in 100 MHz; maximum) | L: low voltage M: medium voltage L: low voltage | LDMOS technology generation | flange material L = CPC X = Cu | option: earless package | P1dB power | push-pull device |
B | L | S | 6 | G | 2731 | L | S | -120 | G |
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B: semiconductor die made of Si | L: high-frequency power transistor | A: avionics frequency band operation L: L-Band frequency operation S: S-Band frequency operation | LDMOS technology generation | G: standard LDMOS (28 V) H: high voltage LDMOS (50 V) | frequency band (in 100 MHz; here: 2700-3100) | flange material L = CPC | S: earless package P: pallet | P1dB power | option: gullwing shaped leads P: push-pull device R: enhanced ruggedness |
C | L | F | 1G | 0040 | S | 50 | P |
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primary material identifier C = wide band-gap compound materials, eg GaN | L: high-frequency power transistor | package style F = ceramic P = overmolded plastic | technology generation 1G = 1st generation | 35 to 60: upper frequency, 10x GHz value: 35 = 3.5 GHz; 60 = 6.0 GHz 00 to 40: lower frequency, 10x GHz value: 00 = 0 GHz or DC; 40 = 4.0 GHz | earless type S = earless no S means eared package | 2 to 1500:nominal P3dB in Watts: eg 50 = 50 W | push-pull indicator P = push-pull type no P means single-ended transistor |
LTE | 10 | 01 | M | C |
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MARKET LTE = LTE WLAN = Wireless LAN GPS = GPS BTS = Basestation / Small Cell MMW = mmWave RDR = Radar | FUNCTION 0 = Passive 1 = LNA 2 = To be defined 3 = LNA Bypass 4 = Multi LNA + SW 5 = LNA, DSA, VGA / Multi LNA, SW, MIPI, MUX 6 = MPA 7 = FEIC 8 = LNA, VCO, PLL, MIX, IF 9 = ABF | SERIAL NUMBER | FREQUENCY IN GHz A = ALL L = 0.7 —— 1 M = 1.4 —— 2 H = 2 —— 2.8 U = 3 —— 4 C = 4 —— 8 X = 8 —— 12 K = 12 —— 40 V = 40 —— 75 W = 75 —— 100 Y = Multi frequency | PACKAGE C = CSP |