- Excellent linearity, stability and reliability
- Rugged construction
- Extremely low noise
- High power gain
- Low total cost of ownership
Philips Semiconductor | RF Power Transistors | RF Modules
We offer HF/VHF/UHF N-channel Power MOSFET
RF Modules
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RF Power
Philips Semiconductor is the fastest growing supplier of LDMOS transistors for cellular infrastructure, leading the WCDMA and LTE markets. Our promise is unprecedented performance combined with best-in-class application support and constant innovation. Our design and manufacturing technologies ensure the best PA manufacturing yields in the industry. Our latest 9th generation LDMOS
RF transistors offer the best solutions for all cellular frequency bands. With the current industry focus on cost reduction, we complement our product portfolio with OMP and MMIC product families, which combine high performance with low cost.
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Documentation and Support
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Part Numbering
Device naming conventions for RF power transistors for base stations
| B | L | F | 8 | G | 22 | L | S | -45 | P | R | B | N | A | G | V | W |
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
| B: semiconductor die made of Si | L: high-frequency power transistor | P: overmolded plastic package (OMP) M: MMIC module D: fully integrated Doherty amplifier C: air cavity plastic (ACP) package F: ceramic package | LDMOS technology generation | H: high voltage LDMOS (50 V) G: standard D: Doherty | operating frequency (in 100 MHz; maximum) | flange material L = CPC X =Cu | option: earless package | P1dB power | push-pull device | enhanced ruggedness | option: current sense lead | specialty | asymmetrical Doherty | gullwing-shaped leads | video bandwidth enhanced | supply thru V-leads |
Device naming conventions for 2.45 GHz ISM band
| B | L | C | 2425 | M | 8 | L | S | 300 | P |
| | | | | | | | | | | | | | | | | | | | |
| B: semiconductor die made of Si | L: high-frequency power transistor | P: overmolded plastic package (OMP) C: air cavity plastic (ACP) package F: ceramic package | operating frequency (in 100 MHz; maximum) | L: low voltage M: medium voltage L: low voltage | LDMOS technology generation | flange material L = CPC X = Cu | option: earless package | P1dB power | push-pull device |
Device naming conventions for RF power transistors for aerospace and defense
| B | L | S | 6 | G | 2731 | L | S | -120 | G |
| | | | | | | | | | | | | | | | | | | | |
| B: semiconductor die made of Si | L: high-frequency power transistor | A: avionics frequency band operation L: L-Band frequency operation S: S-Band frequency operation | LDMOS technology generation | G: standard LDMOS (28 V) H: high voltage LDMOS (50 V) | frequency band (in 100 MHz; here: 2700-3100) | flange material L = CPC | S: earless package P: pallet | P1dB power | option: gullwing shaped leads P: push-pull device R: enhanced ruggedness |
Device naming conventions for GaN RF power amplifiers
| C | L | F | 1G | 0040 | S | 50 | P |
| | | | | | | | | | | | | | | | |
| primary material identifier C = wide band-gap compound materials, eg GaN | L: high-frequency power transistor | package style F = ceramic P = overmolded plastic | technology generation 1G = 1st generation | 35 to 60: upper frequency, 10x GHz value: 35 = 3.5 GHz; 60 = 6.0 GHz 00 to 40: lower frequency, 10x GHz value: 00 = 0 GHz or DC; 40 = 4.0 GHz | earless type S = earless no S means eared package | 2 to 1500:nominal P3dB in Watts: eg 50 = 50 W | push-pull indicator P = push-pull type no P means single-ended transistor |
BL SAS new type naming convention
| LTE | 10 | 01 | M | C |
| | | | | | | | | | |
| MARKET LTE = LTE WLAN = Wireless LAN GPS = GPS BTS = Basestation / Small Cell MMW = mmWave RDR = Radar | FUNCTION 0 = Passive 1 = LNA 2 = To be defined 3 = LNA Bypass 4 = Multi LNA + SW 5 = LNA, DSA, VGA / Multi LNA, SW, MIPI, MUX 6 = MPA 7 = FEIC 8 = LNA, VCO, PLL, MIX, IF 9 = ABF | SERIAL NUMBER | FREQUENCY IN GHz A = ALL L = 0.7 —— 1 M = 1.4 —— 2 H = 2 —— 2.8 U = 3 —— 4 C = 4 —— 8 X = 8 —— 12 K = 12 —— 40 V = 40 —— 75 W = 75 —— 100 Y = Multi frequency | PACKAGE C = CSP |